Abstract
Coherent quantum beat spectroscopy has recently gained importance for the investigation of semiconducting materials and structures. The variety of excitonic resonances in bulk and low-dimensional semiconductors, and the advent of ultrafast lasers with pulse lengths shorter than typical dephasing times of these excitons, have made it possible to observe quantum beats between close-lying excitonic transitions.1,2,3 In particular, the beat phenomena have been observed in four-wave mixing (FWM) experiments on exciton complexes in GaAs multiple quantum wells,4,5,6,7,8 and in bulk semiconductors.3
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Erland, J., Balslev, I., Hvam, J.M. (1994). Nature of Coherent Four-Wave Mixing Beats in Semiconductors. In: Phillips, R.T. (eds) Coherent Optical Interactions in Semiconductors. NATO ASI Series, vol 330. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-9748-0_18
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