Abstract
Measuring the electrical characteristics of a set of transistors with the same gate-length and gate-width that are processed in the same technology, will not yield the same results. During the fabrication process small variations will occur that result in a statistical variation of the transistor properties. This variation depends on the dimensions of the matched component and its biasing conditions. This phenomenon is referred to as transistor mismatch.
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© 2004 Springer Science+Business Media New York
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Van den Bosch, A., Steyaert, M., Sansen, W. (2004). Transistor Mismatch: Evolution and Relevance. In: Static and Dynamic Performance Limitations for High Speed D/A Converters. The Springer International Series in Engineering and Computer Science, vol 761. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-6579-3_8
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DOI: https://doi.org/10.1007/978-1-4757-6579-3_8
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4419-5434-3
Online ISBN: 978-1-4757-6579-3
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