Abstract
The optical properties of direct gap excitons in semiconductors are understood in great detail in the regime of linear response and little influence of surfaces and interfaces. In this case the quantum mechanics of the electron-hole motion and the propagation of electromagnetic waves represent phenomena which conceptually and computationally are well separated: stationary states of the quantum mechanics are mapped into poles in the complex linear susceptibility which is to be inserted into Maxwell’s equations.
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Balslev, I. (1989). Linear and Nonlinear Optics of Confined Excitons. In: Fasol, G., Fasolino, A., Lugli, P. (eds) Spectroscopy of Semiconductor Microstructures. NATO ASI Series, vol 206. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-6565-6_23
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DOI: https://doi.org/10.1007/978-1-4757-6565-6_23
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