Abstract
The optical properties of indirect GaAs/AlAs superlattices reflect a band structure in which the admixture of states issued from various points of the Brillouin zone plays an important role. We decribe here several experiments in which the degree of mixing between X and Γ states is monitored by tuning the energy spacing between the corresponding minima. Cw and time resolved photoluminescence experiments, in and out of the presence of an electric field, allow the determination of the strength of the potential responsible for the mixing. Under higher optical excitation the character of the photoluminescence changes drastically from a mixed indirect exciton into a very efficient electron-hole plasma recombination. The bandgap energy of this plasma increases with excitation density as a result of the separation of electron and holes along the growth axis.
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Meynadier, MH. (1989). Indirect GaAs/AlAs Superlattices. In: Fasol, G., Fasolino, A., Lugli, P. (eds) Spectroscopy of Semiconductor Microstructures. NATO ASI Series, vol 206. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-6565-6_18
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DOI: https://doi.org/10.1007/978-1-4757-6565-6_18
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