Abstract
Since the invention of Molecular Beam Epitaxy1–2, a method which allows for multi-layer heterostructures to be grown with atomically abrupt interfaces and precise thickness control of the constituent compositionally different layers, a considerable and continous interest has been shown for the investigation of the unusual properties of these systems.
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Kanellis, G. (1989). Calculation of Phonons in Superlattices the Ge/Si Superlattices Along [0 0 1]. In: Fasol, G., Fasolino, A., Lugli, P. (eds) Spectroscopy of Semiconductor Microstructures. NATO ASI Series, vol 206. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-6565-6_13
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