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Photonic Applications of Semiconductor-Doped Glasses

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Semiconductor Nanocrystals

Part of the book series: Nanostructure Science and Technology ((NST))

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Abstract

The technical capability to produce structures in solids that are small and precise enough in dimension to be comparable to the Bohr radius of an electron is a relatively recent technological development. This effort began with the invention of a deposition technique called MBE (molecular beam epitaxy). From this technique came the first layered structures in GaAs where the layer thickness could be controlled to a dimension less than the Bohr radius, ħ 2 К / m e,h e 2 , where, К is the dielectric constant of the material, and me, h is the mass of the electron or hole. These precisely controlled layered structures gave birth to the “quantum well” devices that have played such an important role in the opto-electronics industry. The key property of the structure is the dependence of the energy levels on the dimension of the layers.. The term that applies to the effect where the physical size of the structure is smaller that the normal electron orbit is called “quantum confinement.”

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Author information

Authors and Affiliations

  1. Science and Technology Division, Corning Incorporated, USA

    N. F. Borrelli

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  1. N. F. Borrelli
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Editors and Affiliations

  1. Naval Research Laboratory, Washington, D.C., USA

    Alexander L. Efros

  2. Natural Research Council of Canada, Ottawa, Ontario, Canada

    David J. Lockwood

  3. New Jersey Institute of Technology, Newark, New Jersey, USA

    Leonid Tsybeskov

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Borrelli, N.F. (2003). Photonic Applications of Semiconductor-Doped Glasses. In: Efros, A.L., Lockwood, D.J., Tsybeskov, L. (eds) Semiconductor Nanocrystals. Nanostructure Science and Technology. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-3677-9_1

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  • DOI: https://doi.org/10.1007/978-1-4757-3677-9_1

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4419-3402-4

  • Online ISBN: 978-1-4757-3677-9

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