Abstract
An investigation was made of the time constants of an InAs p-n junction laser. The carrier recombination lifetime was measured in the active region of the diode. The dependence of the delay time of a light pulse, relative to an injection current pulse, was determined. Near the laser threshold, the delay time was ~33 nsec, but when the threshold current was exceeded fivefold the delay decreased to ~6 nsec.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Literature Cited
B. S. Goldstein and R. M. Weigand, Proc. IEEE, 53:195 (1965).
K. Konnerth and C. Lanza, Appl. Phys. Letters, 4:120 (1964).
Yu. A. Drozhbin, V. V. Nikitin, A. S. Semenov, B. M. Stepanov, A. M. Tolmachev, and V. A. Yakovlev, Izmeritel’naya Tekhnika, No. 11, p. 92 (1966).
N. G. Basov, Yu. A. Drozhbin, Yu. P. Zakharov, V. V. Nikitin, A. S. Semenov, B. M. Stepanov, A. M. Tolmachev, and V. A. Yakovlev, Fiz. Tverd. Tela, 8:2816 (1966).
W. P. Dumke, Phys. Rev., 132:1998 (1963).
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1971 Springer Science+Business Media New York
About this chapter
Cite this chapter
Buber, V.B., Nikitin, V.V., Fedoseev, K.P. (1971). Investigation of the Time Constants of an Indium Arsenide Laser. In: Ryvkin, S.M., Shmartsev, Y.V. (eds) Physics of p-n Junctions and Semiconductor Devices. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-1232-2_8
Download citation
DOI: https://doi.org/10.1007/978-1-4757-1232-2_8
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4757-1234-6
Online ISBN: 978-1-4757-1232-2
eBook Packages: Springer Book Archive