Abstract
A brief description is given of the principal physical properties of p- and n-type silicon compensated with zinc. Specific suggestions are made about the possible applications of compensated silicon in new optoelectronic and electronic devices. It is shown that this material can be used in photoresistors, light amplifiers, radiation converters, memory elements, photodiodes, and other devices. The principal parameters of these devices are given. It is concluded that zinc-compensated silicon is a promising optoelectronic material.
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© 1971 Springer Science+Business Media New York
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Kornilov, B.V. (1971). New Optoelectronic Devices Made of Zinc-Compensated Silicon. In: Ryvkin, S.M., Shmartsev, Y.V. (eds) Physics of p-n Junctions and Semiconductor Devices. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-1232-2_67
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DOI: https://doi.org/10.1007/978-1-4757-1232-2_67
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4757-1234-6
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