Current-Voltage Characteristics of p-n-p-n Structures Governed By Recombination, Generation, and Avalanche Multiplication Processes in p-n Junctions

Abstract

The principal parameters of the current-voltage characteristics of silicon planar thyristors are calculated taking into account the recombination, generation, and avalanche multiplication in p-n junctions. Analytic expressions are obtained for the determination of the turn-off current, critical gate current, and turn-off gain of an asymmetrical silicon planar thyristor. The dependence of the turn-off current on the gate current and the dependence of the turn-off gain on the anode current are calculated. Allowance is made for the avalanche multiplication of carriers in the central p-n junction and analytic expressions are derived for the turn-on current and the breakover voltage. It is shown that the breakover voltage of planar thyristors designed for low-voltage operation is close to the breakdown voltage of the central p-n junction, which is due to the low value of the leakage current of this junction.