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Physics of p-n Junctions and Semiconductor Devices pp 23–25Cite as

Film Devices Prepared by the Ion Bombardment Method

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Abstract

It is demonstrated that, in principle, it is possible to prepare photodiodes and photoresistors by the ion bombardment of thin (~1 µ) polycrystalline films of cadmium telluride. Possible applications of this method are considered.

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Literature Cited

  1. G. A. Kachurin, A. E. Gorodetskii, Yu. V. Loburets, and L. S. Smirnov, Fiz. Tverd. Tela, 9:494 (1967) .

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  2. D. A. Cusano, IRE Trans. Electron Devices, ED9:504 (1962).

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  4. A. P. Landsman and R. N. Tykvenko, Radiotekhn. i Élektron., 12:503 (1967) .

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  5. A. E. Gorodetskii, G. A. Kachurin, and L. S. Smirnov, Abstracts of Papers presented at Second All-Union Conf. on Diffusion in Semiconductors, Gor’kii, 1966.

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Author information

Authors and Affiliations

  1. Institute of Semiconductor Physics, Siberian Branch, Academy of Sciences of the USSR, Novosibirsk, Russia

    G. A. Kachurin, A. E. Gorodetskii, V. M. Zelevinskaya & L. S. Smirnov

Authors
  1. G. A. Kachurin
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  2. A. E. Gorodetskii
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  3. V. M. Zelevinskaya
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  4. L. S. Smirnov
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Editor information

Editors and Affiliations

  1. Academy of Sciences of the USSR, A. F. Ioffe Physicotechnical Institute, Leningrad, USSR

    S. M. Ryvkin  & Yu. V. Shmartsev  & 

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© 1971 Springer Science+Business Media New York

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Kachurin, G.A., Gorodetskii, A.E., Zelevinskaya, V.M., Smirnov, L.S. (1971). Film Devices Prepared by the Ion Bombardment Method. In: Ryvkin, S.M., Shmartsev, Y.V. (eds) Physics of p-n Junctions and Semiconductor Devices. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-1232-2_6

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  • DOI: https://doi.org/10.1007/978-1-4757-1232-2_6

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4757-1234-6

  • Online ISBN: 978-1-4757-1232-2

  • eBook Packages: Springer Book Archive

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