Abstract
Electrical properties and injection luminescence were studied in Alx Ga1-xAs-GaAs n-p and p-n heterojunctions containing various amounts of aluminum (Eg = 1.52–1.9 eV at 300°K). A band model of the heterojunctions was established and its principal parameters were determined. It is shown that the main discontinuity occurs in the conduction band. The size ΔEc of this discontinuity varies linearly with the aluminum content in Alx Ga1-xAs; the discontinuity ΔEv in the valence band is almost zero. The injection luminescence spectra agree with the proposed model. The mechanism of current flow is compared with features of the electroluminescence spectra. At room temperature and above, the initial (low-current) section, the forward branch of the current-voltage characteristic for n-p heterojunctions is determined by recombination in the space-charge layer, and at current densities above 1–5 A/cm2, by recombination in the bulk of the diode. At low temperatures, the forward branch is given by the theory of Shockley, Noyce, and Sah. For p-n heterojunctions, the initial section of the current—voltage characteristic is of the tunnel type; at about 5 A /cm2 and above, the mechanism of current flow is similar to that in n-p heterojunctions.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
Literature Cited
N. A. Goryunova, The Chemistry of Diamond-like Semiconductors, Chapman and Hall, London (1965).
R. L. Anderson, Solid State Electron., 5:341 (1962).
Zh. I. Alferov, V. I. Korol’kov, and M. K. Trukan, Fiz. Tverd. Tela, 8:3513 (1966).
F. Herman, J. Electronics, 1:103 (1955).
J. F. Black and S. M. Ku, J. Electrochem. Soc., 113:249 (1966).
Zh. I. Alferov and D. Z. Garbuzov, Fiz. Tverd. Tela, 7:2375 (1965).
Zh. I. Alferov, V. B. Khalfin, and R. F. Kazarinov, Fiz. Tverd. Tela, 8:3102 (1966).
Zh. I. Alferov, V. M. Andreev, V.I. Korol’kov, E. L. Portnoi, and D. N. Tret’yakov, Fiz. Tekh. Poluprov., 2:1016 (1968).
C. T. Sah, R. N. Noyce, and W. Shockley, Proc. IRE, 45:1228 (1957).
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1971 Springer Science+Business Media New York
About this chapter
Cite this chapter
Alferov, Z.I., Andreev, V.M., Korol’kov, V.I., Portnoi, E.L., Tret’yakov, D.N. (1971). Alx Ga1-x As-GaAs Heterojunctions. In: Ryvkin, S.M., Shmartsev, Y.V. (eds) Physics of p-n Junctions and Semiconductor Devices. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-1232-2_58
Download citation
DOI: https://doi.org/10.1007/978-1-4757-1232-2_58
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4757-1234-6
Online ISBN: 978-1-4757-1232-2
eBook Packages: Springer Book Archive