Abstract
Electron multiplication in GaAs p—n junctions with various impurity concentration gradients was measured in the range of low multiplication factors, M ≤ 1.1. The p—n junctions were formed by diffusion of zinc into n-type material. The method of Chynoweth and McKay was applied to the experimental results to obtain the threshold energy for impact ionization by electrons, εin = 1.8 ± 0.1 eV, and the mean free path of hot electrons (λ = 50 Å) in the case of scattering by optical phonons. By considering zero-phonon electron transitions accompanying impact ionization, it is shown that the experimental value of ε in corresponds to that expected from the approximate band structure of GaAs.
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Gutkin, A.A., Magerramov, É.M., Nasledov, D.N., Sedov, V.E. (1971). Threshold Energy for Electron-Hole Pair Production by Hot Electrons in GaAs. In: Ryvkin, S.M., Shmartsev, Y.V. (eds) Physics of p-n Junctions and Semiconductor Devices. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-1232-2_53
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DOI: https://doi.org/10.1007/978-1-4757-1232-2_53
Publisher Name: Springer, Boston, MA
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