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p—n Junction Resistance of IMPATT Diodes at Frequencies From 0 to 10 Mc

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Physics of p-n Junctions and Semiconductor Devices

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Abstract

The results of an experimental study of p—n junction resistance in diffused germanium IMPATT diodes are compared with theoretical conclusions. It is found that, at low frequencies (« 1 Mc), the junction resistance is several times greater than the calculated value, decreasing as the frequency and current increase. It is shown that this effect is due to heating of the p—n junction by the current. A new method is proposed for measuring the thermal resistance of these diodes.

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Literature Cited

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Authors
  1. V. L. Aronov
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  2. A. I. Mel’nikov
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  3. A. S. Tager
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Editor information

Editors and Affiliations

  1. Academy of Sciences of the USSR, A. F. Ioffe Physicotechnical Institute, Leningrad, USSR

    S. M. Ryvkin  & Yu. V. Shmartsev  & 

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© 1971 Springer Science+Business Media New York

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Aronov, V.L., Mel’nikov, A.I., Tager, A.S. (1971). p—n Junction Resistance of IMPATT Diodes at Frequencies From 0 to 10 Mc. In: Ryvkin, S.M., Shmartsev, Y.V. (eds) Physics of p-n Junctions and Semiconductor Devices. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-1232-2_47

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  • DOI: https://doi.org/10.1007/978-1-4757-1232-2_47

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4757-1234-6

  • Online ISBN: 978-1-4757-1232-2

  • eBook Packages: Springer Book Archive

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