Abstract
It is shown that variation of the temperature of the ambient medium can produce, in addition to a fall in the static turn-on current of a thyristor, a more complex behavior of this current: an initial descent to some minimum may be followed by a rise and another fall. This effect is atrributed to the high level of carrier multiplication in the collector p-n junction of the thyristor at a temperature corresponding to the turn-on current minimum. It is also due to the different temperature dependences of the current gains of the two transistors (which together form the equivalent circuit of a thyristor) and of the multiplication coefficients of the collector p-n junction.
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Literature Cited
R. E. Smolyanskii, Radiotekhn. i Élektron., 8:1615 (1963).
P. S. Raderecht and C. A. Hogarth, J. Electron. Control, 17:145 (1964).
I. V. Grekhov et al., in: Electric Drives with Semiconductor Control, Énergiya, Moscow (1964).
C. T. Sah, R. N. Noyce, and W. Shockley, Proc. IRE, 45:1228 (1957).
K. G. McKay, Phys. Rev., 94:877 (1954).
R. E. Smolyanskii, in: Physics of p-n Junctions, Zinatne, Riga (1966).
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© 1971 Springer Science+Business Media New York
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Dumanevich, A.N., Smolyanskii, R.E., Chelnokov, V.E. (1971). Some Features of the Temperature Dependence of the Static Turn-On Current of Thyristors. In: Ryvkin, S.M., Shmartsev, Y.V. (eds) Physics of p-n Junctions and Semiconductor Devices. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-1232-2_30
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DOI: https://doi.org/10.1007/978-1-4757-1232-2_30
Publisher Name: Springer, Boston, MA
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