Abstract
A brief report is given of the results of an experimental investigation of the dependence of the breakdown voltage (Ubr) of silicon p-n junctions on the surface potential (Ψs). It was established that depletion of the majority carriers in the surface layer of a high-resistivity region of a diode increased the breakdown voltage. The dependence Ubr = f(Ψs) was determined for silicon p-n junctions.
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© 1971 Springer Science+Business Media New York
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Ostroumova, E.V. (1971). Dependence of the Breakdown Voltage of Silicon p-n Junctions on the Surface Potential. In: Ryvkin, S.M., Shmartsev, Y.V. (eds) Physics of p-n Junctions and Semiconductor Devices. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-1232-2_29
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DOI: https://doi.org/10.1007/978-1-4757-1232-2_29
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4757-1234-6
Online ISBN: 978-1-4757-1232-2
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