Abstract
The detection and investigation of current filaments are reported for diodes made of gold-doped silicon. The investigation was made at room temperature using two methods: a scanning light probe and the sectioning of the contacts. It was found that a filament first appeared in a limited volume and then broadened with increasing voltage across the diode. An inhomogeneous distribution of an impurity in a semiconductor produced a nonuniform broadening of the filament with increasing current, and a complex current—voltage characteristic.
A large part of this paper was presented at the Third All Union Conference on Physical Processes in p-nJunctions in Semiconductors (November, 1966, Tbilisi).
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Literature Cited
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Varlamov, I.V., Sondaevskaya, I.A., Sondaevskii, V.P. (1971). Filamentation of the Current in Diodes Made of Semiconductors with Deep Impurity Levels. In: Ryvkin, S.M., Shmartsev, Y.V. (eds) Physics of p-n Junctions and Semiconductor Devices. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-1232-2_24
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DOI: https://doi.org/10.1007/978-1-4757-1232-2_24
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