Abstract
A study was made of the electrical properties of heterojunctions formed between single crystals of a solid solution of gallium arsenide in germanium [Ge0.85(GaAs)0.15, denoted by α(Ge)] and gallium arsenide. Optical investigations showed that the forbidden band width of α(Ge) was of the order of 1 eV. The current—voltage characteristics of the p-n α(Ge)-GaAs heterojunctions were of a form typical of backward diodes. The current—voltage characteristics of the p-p α(Ge)—GaAs heterojunctions could be accounted for by the diode rectification theory. These characteristics were used to estimate the potential barrier in the p-p heterojunctions (0.2 eV), which was close to the calculated value Ψc = 0.25 eV.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Literature Cited
Yu. D. Chistyakov and É. A. Matson, Dokl. Akad. Nauk SSSR, 177:643 (1967).
C. Kolm, S. A. Kulin, and B. L. Averbach, Phys. Rev., 108:965 (1957).
D. A. Jenny, US Patent No. 2930239, applied for April 16, 1956; granted April 8, 1958.
G. W. Gobeli and F. G. Allen, Phys. Rev., 137:A245 (1965).
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1971 Springer Science+Business Media New York
About this chapter
Cite this chapter
Fedotov, Y.A., Zased, V.S., Matson, É.A. (1971). Electrical Properties of α (Ge) — GaAs Heterojunctions. In: Ryvkin, S.M., Shmartsev, Y.V. (eds) Physics of p-n Junctions and Semiconductor Devices. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-1232-2_22
Download citation
DOI: https://doi.org/10.1007/978-1-4757-1232-2_22
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4757-1234-6
Online ISBN: 978-1-4757-1232-2
eBook Packages: Springer Book Archive