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Part of the book series: Nato Advanced Study Institutes Series ((NSSB,volume 63))

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Abstract

The technical importance of defects has already been considered from the viewpoint of the overall manufacturing process. In this chapter a different approach will be taken and the subject considered from the point of view of the device operation.

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Bibliography

(1) Charge Coupled Devices

  • Charge Transfer Devices, C.H. Sequin and M.F. Tompsett, Academic Press Inc., New York, (1975)

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  • Proceedings of International Conference on CCDs, Learned Information, New York, (1975)

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  • Charge Coupled Devices and Systems, Ed. Howes and Morgan, Wiley, (1979)

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(2) Magnetic Bubble Domain Devices

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  • Magnetic Bubbles, T.H. O’Dell, MacMillan Press Ltd., London, (1974)

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(3) Surface Acoustic Wave Devices

  • IEE Conference Publication 144, The Impact of New Technologies on Signal Processing, Ed. P.M. Grant, (1976)

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  • IEE Reprint Series 2. Surface Acoustic Wave Passive Interdig:itated Devices, Ed. D.P. Morgan, (1976).

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© 1980 Springer Science+Business Media New York

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Milne, A.D. (1980). The Technical Importance of Growth Defects. In: Tanner, B.K., Bowen, D.K. (eds) Characterization of Crystal Growth Defects by X-Ray Methods. Nato Advanced Study Institutes Series, vol 63. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-1126-4_2

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  • DOI: https://doi.org/10.1007/978-1-4757-1126-4_2

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4757-1128-8

  • Online ISBN: 978-1-4757-1126-4

  • eBook Packages: Springer Book Archive

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