Abstract
The relationship between the electric-susceptibility mass m s of free carriers in a semiconductor and the optical properties of the material in the infrared region of the spectrum was first pointed out and applied by Spitzer and Fan [1]. As part of their general treatment of this subject, they showed that reliable values of m s could often be obtained from simple measurements of the normal reflectivity as a function of wavelength. Since that time, this method has been used widely as an experimental tool for studying the nature of charge carriers in semiconductors [2–23].
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Dixon, J.R. (1969). Electric-Susceptibility Mass of Free Carriers in Semiconductors. In: Nudelman, S., Mitra, S.S. (eds) Optical Properties of Solids. Optical Physics and Engineering. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-1123-3_3
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