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Polar/Polar, Covalent/Covalent and Covalent/Polar Semiconductor Superlattices

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Band Structure Engineering in Semiconductor Microstructures

Part of the book series: NATO ASI Series ((NSSB,volume 189))

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Abstract

A comparative study of polar/polar, covalent/covalent, and covalent/polar semiconductor superlattices is presented. Based on the calculated formation energy, charge density and electronic structure, the effects of the superlattice parameters on the overall properties (stability, quantum well structure, indirectness of the band gap etc.) are discussed. Geometry optimized total energy calculations indicate that the formation energy of all superlattices studied is positive implying that the separation (or segregation) into constituent crystals are favored. The contribution of the superlattice periodicity, lattice mismatch, and polarity of sublattices in the formation energy vary depending upon the type of the superlattice. The electronic structure is found to depend strongly on the sublattice periodicity when it is small.

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© 1989 Plenum Press, New York

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Ciraci, S. (1989). Polar/Polar, Covalent/Covalent and Covalent/Polar Semiconductor Superlattices. In: Abram, R.A., Jaros, M. (eds) Band Structure Engineering in Semiconductor Microstructures. NATO ASI Series, vol 189. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-0770-0_4

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  • DOI: https://doi.org/10.1007/978-1-4757-0770-0_4

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4757-0772-4

  • Online ISBN: 978-1-4757-0770-0

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