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Effect of a Parallel Magnetic Field on the Hole Levels in Semiconductor Superlattices

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Band Structure Engineering in Semiconductor Microstructures

Part of the book series: NATO ASI Series ((NSSB,volume 189))

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Abstract

We present a calculation of the hole levels in a GaAs-GaA1As superlattice in a magnetic field parallel to the layers, when the magnetic length is greater or comparable with the superlattice period. A comparison with the electronic levels in the same field configuration shows noticeable analogies, but also differences related to the more complex hole subband structure. A calculation of interband magneto-optical transition intensities is also presented.

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References

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Author information

Authors and Affiliations

  1. International School for Advanced Studies, Strada Costiera 11, I-34014, Trieste, Italy

    A. Fasolino

  2. Hochfeld Magnetlabor, Max Planck Institut für Festkörperforschung, B. P. 166X, F-38042, Grenoble Cedex, France

    A. M. Altarelli

  3. European Synchrotron Radiation Facility, B.P. 220, F-38043, Grenoble Cedex, France

    A. M. Altarelli

Authors
  1. A. Fasolino
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  2. A. M. Altarelli
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Editor information

Editors and Affiliations

  1. School of Engineering and Applied Science, University of Durham, Durham, UK

    R. A. Abram

  2. Department of Theoretical Physics, University of Newcastle upon Tyne, Newcastle upon Tyne, UK

    M. Jaros

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© 1989 Plenum Press, New York

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Fasolino, A., Altarelli, A.M. (1989). Effect of a Parallel Magnetic Field on the Hole Levels in Semiconductor Superlattices. In: Abram, R.A., Jaros, M. (eds) Band Structure Engineering in Semiconductor Microstructures. NATO ASI Series, vol 189. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-0770-0_31

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  • DOI: https://doi.org/10.1007/978-1-4757-0770-0_31

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4757-0772-4

  • Online ISBN: 978-1-4757-0770-0

  • eBook Packages: Springer Book Archive

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