Abstract
The multiple scattering-Xa molecular cluster model is used to study the A center in silicon. We show that this center can be created by Jahn-Teller effects over substitutional oxygen impurity in the lattice. Our defect model provides a consistent explanation for the EPR experimental results obtained for the Si-A center.
Work supported by CNPq and FAPESP, Brasil
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© 1983 Springer-Verlag
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Leite, J.R., Caldas, M.J., Fazzio, A. (1983). A new model for the Si-A center. In: Giber, J., Beleznay, F., Szép, I.C., László, J. (eds) Defect Complexes in Semiconductor Structures. Lecture Notes in Physics, vol 175. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-11986-8_8
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DOI: https://doi.org/10.1007/3-540-11986-8_8
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