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High-Linearity CMOS RF Front-End Circuits

  • Authors
  • Yongwang¬†Ding
  • Ramesh¬†Harjani

Table of contents

  1. Front Matter
    Pages i-xv
  2. Pages 1-7
  3. Pages 57-72
  4. Pages 113-114
  5. Back Matter
    Pages 115-122

About this book

Introduction

The rapidly growing wireless communication industry is increasingly
demanding CMOS RF ICs due to their lower costs and higher integration
levels. The RF front-end of such wireless systems often needs to
handle widely disparate signal levels: small desired signals and
large interferers. Therefore, it becomes necessary to have highly
linear circuits to increase the system dynamic range. However,
traditional CMOS circuit designs are usually limited in either their
speed or in their linear performance. New techniques are needed to
meet the demand for high linearity at radio frequencies.

High-Linearity CMOS RF Front-End Circuits presents some unique
techniques to enhance the linearity of both the receiver and
transmitter. For example, using harmonic cancellation techniques, the
linearity of the receiver front-end can be increased by few tens of
dB with only minimal impact on the other circuit parameters. The new
parallel class A&B power amplifier can not only increase the
transmitter's output power in the linear range, but can also result
in significant savings in power consumption.

High-Linearity CMOS RF Front-End Circuits can be used as a textbook
for graduate courses in RF CMOS design and will also be useful as a reference for the
practicing engineer.

Keywords

CMOS circuit design integrated circuit simulation

Bibliographic information

  • DOI https://doi.org/10.1007/b102361
  • Copyright Information Springer Science+Business Media, Inc. 2005
  • Publisher Name Springer, Boston, MA
  • eBook Packages Engineering
  • Print ISBN 978-0-387-23801-2
  • Online ISBN 978-0-387-23802-9
  • Buy this book on publisher's site
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