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  • © 2000

Defects in SiO2 and Related Dielectrics: Science and Technology

Part of the book series: NATO Science Series II: Mathematics, Physics and Chemistry (NAII, volume 2)

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Table of contents (23 chapters)

  1. Front Matter

    Pages i-viii
  2. Structure and Topology

    1. TOPOLOGY AND TOPOLOGICAL DISORDER IN SILICA

      • Linn W. Hobbs, Xianglong Yuan
      Pages 37-71
  3. Surface Defects

    1. DEFECTS ON ACTIVATED SILICA SURFACE

      • V.A. RADZIG
      Pages 339-370

About this book

Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies.
This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.

Editors and Affiliations

  • Dipartimento di Scienza dei Materiali, Università Milano-Bicocca, Milano, Italy

    G. Pacchioni

  • Institute of Solid State Physics, University of Latvia, Riga, Latvia

    L. Skuja

  • Naval Research Laboratory, USA

    D. L. Griscom

Bibliographic Information

Buy it now

Buying options

eBook USD 169.00
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book USD 219.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book USD 219.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Other ways to access