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Secondary Ion Mass Spectrometry SIMS III

Proceedings of the Third International Conference, Technical University, Budapest, Hungary, August 30–September 5, 1981

  • Conference proceedings
  • © 1982

Overview

Editors:
  1. A. Benninghoven

    1. Physikalisches Institut, Universität Münster, Münster, Fed. Rep. of Germany

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  2. J. Giber

    1. Physical Institute of the Technical University, Budapest, Hungary

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  3. J. László

    1. Physical Institute of the Technical University, Budapest, Hungary

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  4. M. Riedel

    1. Department of Physical Chemistry and Radiology, Eötvös University, Budapest, Hungary

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  5. H. W. Werner

    1. Philips Research Laboratories, Eindhoven, The Netherlands

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Part of the book series: Springer Series in Chemical Physics (CHEMICAL, volume 19)

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Table of contents (69 papers)

  1. Fundamentals I. Ion Formation

    1. Molecule Formation in Oxide Sputtering

      • H. Oechsner
      Pages 106-114

    2. Dependence of Ionization Yields Upon Elemental Composition; Isotopic Variations

      • G. Slodzian
      Pages 115-123

    3. Measurements of the Energy Distributions of Positive Secondary Ions in the Energy Range from 0 to About 500 eV

      • C. Pahlke, H. Düsterhöft, U. Müller-Jahreis
      Pages 124-127

    4. Ion Dose Effects in Static SIMS

      • W. Speckmann, S. Prigge, E. Bauer
      Pages 128-133

    5. Current Density Effects on Secondary Ion Emission from Multicomponent Targets

      • A. Barcz, M. Domanski, B. Wojtowicz-Natanson
      Pages 134-139

    6. Isotope Effect in Secondary Ion Emission

      • J. C. Lorin, A. Havette, G. Slodzian
      Pages 140-150

    7. Caesiated Surfaces and Negative Ion Emission

      • M. Bernheim, G. Slodzian
      Pages 151-158

    8. Secondary Ion Mass Spectrometry of Organic Compounds; A Comparison with Other Methods (EI, CI, FI, FD, FAB)

      • K. D. Klöppel
      Pages 159-164

    9. Secondary Ion Emission from NbV-Alloys

      • J. Schou, G. Flentje, W. O. Hofer, U. Linke
      Pages 165-169

  2. Fundamentals II. Depth Profiling

    1. Front Matter

      Pages 171-171
      Download chapter PDF

    2. Depth Profiling by SIMS: Depth Resolution, Dynamic Range and Sensitivity

      • C. W. Magee, R. E. Honig, C. A. Evans Jr.
      Pages 172-185

    3. Disturbing Effects in Sputter Profiling

      • S. Hofmann
      Pages 186-200

    4. The Theory of Concentration Depth Profiling by Sputter Etching

      • W. O. Hofer, U. Littmark
      Pages 201-205

    5. Surface Topography Development During SIMS Investigations and Using it to Get Additional Information on Polycrystalline and Heterogeneous Solids

      • W. Hauffe
      Pages 206-210

    6. Sputtering of Metals with 20 keV O2 +; Characteristic Etch Patterns, Sputtered Atom Yields and Secondary Ion Mass Spectra

      • K. Tsunoyama, T. Suzuki, Y. Ohashi, M. Konishi
      Pages 211-215

    7. Depth Resolution of Ion Bombardment Technique Applied to NiPd, NiPt, PtPd, Thin Layer Systems

      • J. Giber, D. Marton, J. László, J. Mizsei
      Pages 216-221

    8. The Influence of Ion Bombardment on the Results of AES-Depth Profiling on Silicides

      • Th. Wirth
      Pages 222-226

    9. A Study of Secondary Ion Energy Distributions During Sputtering of MIS Layer Structures

      • G. Ph. Romanova, P. I. Didenko, A. A. Yefremov, V. G. Litovchenko, R. I. Marchenko
      Pages 227-232

    10. Structural Effects in SIMS at the Depth Profiling of Boron Implanted Silicon

      • V. T. Cherepin, A. K. Kosyachkov, A. D. Krasyuk, M. A. Vasiliev
      Pages 233-237

    11. Comparison of Compositional Thin Film Depth Profiling Obtained by SIMS, IIR and AES

      • E. Hauser, G. Hobi, K. H. Guenther, E. Brandstaetter
      Pages 238-241
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Keywords

About this book

Following the biannual meetings in MUnster (1977) and Stanford (1979) the Third International Conference on Secondary Ion Mass Spectroscopy was held in Budapest from August 31 to September 5, 1981. The Conference was attended by about 250 participants. The success of the 1981 Conference in Budapest was especially due to the excellent preparation and organization by the Local Organizing Committee. We would also like to acknowledge the generous hospitality and cooperation of the Hungarian Academy of Sciences. Japan was chosen to be the location for the next conference in 1983. SIMS conferences are devoted to two main issues: improving the application of SIMS in different and especially new fields, and understanding the ion formation process. Needless to say, there is a very strong interaction be­ tween these two issues. The major reason for the rapid increase in SIMS activities in the last few years is the fact that SIMS is a powerful tool for bulk, thin-film, and surface analysis. Today it is extensively and successfully applied in such different fields as depth profiling and imaging of semiconductor devices, in isotope analysis of minerals, in imaging biological tissues, in the study of catalysts and catalytic reactions, in oxide-layer analysis on metals in drug detection, and in the analysis of body fluids.

Editors and Affiliations

  • Physikalisches Institut, Universität Münster, Münster, Fed. Rep. of Germany

    A. Benninghoven

  • Physical Institute of the Technical University, Budapest, Hungary

    J. Giber, J. László

  • Department of Physical Chemistry and Radiology, Eötvös University, Budapest, Hungary

    M. Riedel

  • Philips Research Laboratories, Eindhoven, The Netherlands

    H. W. Werner

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