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  • Book
  • © 1998

Mesoscopic Physics and Electronics

Editors:

  • The first comprehensive monograph covering the complete spectrum of mesoscopic physics in electronic nanodevices
  • It will become the basic book in this new field of research worldwide

Part of the book series: NanoScience and Technology (NANO)

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Table of contents (35 chapters)

  1. Electron-Photon Interaction in Nanostructures

    1. Photonic Crystals

      • T. Baba
      Pages 167-175
    2. Toward Lasers of the Next Generation

      • Y. Arakawa
      Pages 181-185
  2. Quantum-Effect Devices

    1. Introduction

      • K. Furuya
      Pages 187-187
    2. Electron-Wave Coherent Coupling Devices

      • N. Tsukada
      Pages 195-203
    3. Electron-Wave Diffraction Devices

      • K. Furuya
      Pages 204-212
    4. Devices Using Ultimate Silicon Technology

      • T. Hiramoto
      Pages 213-219
  3. Formation and Characterization of Quantum Structures

    1. Introduction

      • H. Nakashima
      Pages 227-227
    2. Quantum Wires and Dots by MOCVD (I)

      • T. Fukui
      Pages 228-237
    3. Quantum Wires and Dots by MOCVD (II)

      • Y. Arakawa
      Pages 238-246
    4. Tilted T-Shaped and (775)B Quantum Wires

      • S. Hiyamizu
      Pages 255-263
    5. SiGe Quantum Structures

      • N. Usami, Y. Shiraki
      Pages 264-271
  4. Back Matter

    Pages 273-282

About this book

Semiconductor technology has developed considerably during the past several decades. The exponential growth in microelectronic processing power has been achieved by a constant scaling down of integrated cir,cuits. Smaller fea­ ture sizes result in increased functional density, faster speed, and lower costs. One key ingredient of the LSI technology is the development of the lithog­ raphy and microfabrication. The current minimum feature size is already as small as 0.2 /tm, beyond the limit imposed by the wavelength of visible light and rapidly approaching fundamental limits. The next generation of devices is highly likely to show unexpected properties due to quantum effects and fluctuations. The device which plays an important role in LSIs is MOSFETs (metal­ oxide-semiconductor field-effect transistors). In MOSFETs an inversion layer is formed at the interface of silicon and its insulating oxide. The inversion layer provides a unique two-dimensional (2D) system in which the electron concentration is controlled almost freely over a very wide range. Physics of such 2D systems was born in the mid-1960s together with the development of MOSFETs. The integer quantum Hall effect was first discovered in this system.

Editors and Affiliations

  • Institute for Solid State Physics, University of Tokyo, Minato-ku, Tokyo 106, Japan

    T. Ando

  • Institute of Industrial Science, University of Tokyo, Minato-ku, Tokyo 106, Japan

    Y. Arakawa

  • Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo 152, Japan

    K. Furuya

  • Department of Basic Science, University of Tokyo, Meguro-ku, Tokyo 153, Japan

    S. Komiyama

  • Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567, Japan

    H. Nakashima

Bibliographic Information

Buy it now

Buying options

eBook USD 84.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book USD 109.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Other ways to access