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Growth Mechanisms and Novel Properties of Silicon Nanostructures from Quantum-Mechanical Calculations

  • Rui-Qin Zhang

Part of the SpringerBriefs in Molecular Science book series (BRIEFSMOLECULAR)

Table of contents

  1. Front Matter
    Pages i-viii
  2. Rui-Qin Zhang
    Pages 1-6
  3. Rui-Qin Zhang
    Pages 7-12
  4. Rui-Qin Zhang
    Pages 13-30
  5. Rui-Qin Zhang
    Pages 65-66

About this book

Introduction

In this volume, Prof. Zhang reviews the systematic theoretical studies in his group on the growth mechanisms and properties of silicon quantum dots, nanotubes and nanowires, including: mechanisms of oxide-assisted growth of silicon nanowires, energetic stability of pristine silicon nanowires and nanotubes, thermal stability of hydrogen terminated silicon nanostructures, size-dependent oxidation of hydrogen terminated silicon nanostructures, excited-state relaxation of hydrogen terminated silicon nanodots, and direct-indirect energy band transitions of silicon nanowires and sheets by surface engineering and straining. He also discusses the potential applications of these findings.
This book will mainly benefit those members of the scientific and research community working in nanoscience, surface science, nanomaterials and related fields.

Keywords

Electron Transport Energy Band Structures Growth Mechanism Phonon Transport Silicon Nanotubes Silicon Nanowires Silicon Quantum Dots Silicon nanostructure Structural Stability Surface engineering

Authors and affiliations

  • Rui-Qin Zhang
    • 1
  1. 1.City University of Hong Kong Department of Physics & Material ScienceHong Kong SARPeople's Republic of China

Bibliographic information

  • DOI https://doi.org/10.1007/978-3-642-40905-9
  • Copyright Information The Author(s) 2014
  • Publisher Name Springer, Berlin, Heidelberg
  • eBook Packages Chemistry and Materials Science
  • Print ISBN 978-3-642-40904-2
  • Online ISBN 978-3-642-40905-9
  • Series Print ISSN 2191-5407
  • Series Online ISSN 2191-5415
  • Buy this book on publisher's site
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