Fowler-Nordheim Field Emission

Effects in Semiconductor Nanostructures

  • Sitangshu Bhattacharya
  • Kamakhya Prasad Ghatak

Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 170)

Table of contents

  1. Front Matter
    Pages i-xxii
  2. Fowler–Nordheim Field Emission from Quantum Wires and Superlattices of Nonparabolic Semiconductors

    1. Front Matter
      Pages 1-1
    2. Sitangshu Bhattacharya, Kamakhya Prasad Ghatak
      Pages 3-70
    3. Sitangshu Bhattacharya, Kamakhya Prasad Ghatak
      Pages 71-107
    4. Sitangshu Bhattacharya, Kamakhya Prasad Ghatak
      Pages 109-155
    5. Sitangshu Bhattacharya, Kamakhya Prasad Ghatak
      Pages 157-184
  3. Fowler–Nordheim Field Emission from Quantum-Confined III–V Semiconductors in the Presence of Light Waves

    1. Front Matter
      Pages 185-185
    2. Sitangshu Bhattacharya, Kamakhya Prasad Ghatak
      Pages 187-230
  4. Fowler–Nordheim Field Emission from Quantum-Confined Optoelectronic Semiconductors in the Presence of Intense Electric Field

    1. Front Matter
      Pages 231-231
    2. Sitangshu Bhattacharya, Kamakhya Prasad Ghatak
      Pages 233-280
    3. Sitangshu Bhattacharya, Kamakhya Prasad Ghatak
      Pages 281-327
    4. Sitangshu Bhattacharya, Kamakhya Prasad Ghatak
      Pages 329-333
  5. Back Matter
    Pages 335-338

About this book

Introduction

This monograph solely presents the Fowler-Nordheim field emission (FNFE) from semiconductors and their nanostructures. The materials considered are quantum confined non-linear optical, III-V, II-VI, Ge, Te, carbon nanotubes, PtSb2, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V, Bi2Te3, III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices under magnetic quantization and quantum wires of the aforementioned superlattices. The FNFE in opto-electronic materials and their quantum confined counterparts is studied in the presence of light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The importance of band gap measurements in opto-electronic materials in the presence of external fields is discussed from this perspective. This monograph contains 200 open research problems which form the very core and are useful for Ph. D students and researchers. The book can also serve as a basis for a graduate course on field emission from solids.

Keywords

FNFE in optoelectronic materials Fowler-Nordheim field emission nanostructured materials quantized optoelectronic materials quantum confined materials quantum confined systems quantum wells, dots and wires strong magnetic field superlattices thermoelectric power

Authors and affiliations

  • Sitangshu Bhattacharya
    • 1
  • Kamakhya Prasad Ghatak
    • 2
  1. 1.Ctr. Electronics Design & Technology, Nano Scale Device Research Lab.Indian Institute of ScienceBangaloreIndia
  2. 2.Dept. Electronic ScienceUniversity CalcuttaKolkataIndia

Bibliographic information

  • DOI https://doi.org/10.1007/978-3-642-20493-7
  • Copyright Information Springer-Verlag Berlin Heidelberg 2012
  • Publisher Name Springer, Berlin, Heidelberg
  • eBook Packages Physics and Astronomy
  • Print ISBN 978-3-642-20492-0
  • Online ISBN 978-3-642-20493-7
  • Series Print ISSN 0171-1873
  • About this book
Industry Sectors
Electronics
Telecommunications