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Einstein Relation in Compound Semiconductors and Their Nanostructures

  • Book
  • © 2009

Overview

  • First book on the Einstein relation in compound semiconductors
  • Covers the basic physics and applications to nanodevices, dispersion and various physical conditions
  • Both a reference work for researchers and a study text for graduate students
  • Includes supplementary material: sn.pub/extras

Part of the book series: Springer Series in Materials Science (SSMATERIALS, volume 116)

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Table of contents (12 chapters)

Keywords

About this book

This is the first book solely devoted to the Einstein relation in compound semiconductors and their nanostructures. The materials considered are nonlinear optical, III-V, ternary, quaternary, II-VI, IV-VI, Bismuth, stressed compounds, quantum wells, quantum wires, nipi structures, carbon nanotubes, heavily doped semiconductors, inversion layers, superlattices of nonparabolic materials with graded interfaces under magnetic quantization, quantum wire superlattices with different band structures and other field assisted systems. The influence of light on the Einstein relation in semiconductors and their nanostructures has also been investigated in detail by formulating the respective dispersion relations which control the transport in such quantum effect devices. The book deals with many open research problems.

Authors and Affiliations

  • Department of Electronic Science, University of Calcutta, Kolkata, India

    Kamakhya Prasad Ghatak

  • Nanoscale Device Research Laboratory Center for Electronics Design Technology, Indian Institute of Science, Bangalore, India

    Sitangshu Bhattacharya

  • Department of Computer Sciences and Engineering, West Bengal University of Technology, Kolkata, India

    Debashis De

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