Charge-Trapping Non-Volatile Memories

Volume 2--Emerging Materials and Structures

  • Panagiotis┬áDimitrakis

Table of contents

  1. Front Matter
    Pages i-v
  2. Krishnaswamy Ramkumar
    Pages 1-54
  3. Nikolaos Glezos
    Pages 91-122
  4. S. Fakher, A. Sleiman, A. Ayesh, A. AL-Ghaferi, M. C. Petty, D. Zeze et al.
    Pages 123-156
  5. Back Matter
    Pages 211-211

About this book

Introduction

This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced.

  • Provides a comprehensive overview of the technology for charge-trapping non-volatile memories;
  • Details new architectures and current modeling concepts for non-volatile memory devices;
  • Focuses on conduction through multi-layer gate dielectrics stacks.

Keywords

3D Non-volatile Memories Charge-trapping Layer Charge-trapping Memories Flash Memories MAHOS MANOS MONOS Nitride Memories Non-volatile Memories SONOS Semiconductor Memories TANOS

Editors and affiliations

  • Panagiotis┬áDimitrakis
    • 1
  1. 1.Department of MicroelectronicsInstitute of Advanced MaterialsAthensGreece

Bibliographic information

  • DOI https://doi.org/10.1007/978-3-319-48705-2
  • Copyright Information Springer International Publishing AG 2017
  • Publisher Name Springer, Cham
  • eBook Packages Chemistry and Materials Science
  • Print ISBN 978-3-319-48703-8
  • Online ISBN 978-3-319-48705-2
  • About this book
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