Emerging Resistive Switching Memories

  • Jianyong Ouyang

Part of the SpringerBriefs in Materials book series (BRIEFSMATERIALS)

Table of contents

  1. Front Matter
    Pages i-viii
  2. Jianyong Ouyang
    Pages 1-12
  3. Jianyong Ouyang
    Pages 43-61
  4. Jianyong Ouyang
    Pages 63-76

About this book

Introduction


Keywords

Bistable devices Charge trapping Fabrication of novel non-vole. rest. random-access mem. Memory device nanoparticles Memristor devices Neuromorphic memories Nonvolatile memories RRAM Resistive switching Transition metal oxide

Authors and affiliations

  • Jianyong Ouyang
    • 1
  1. 1.Department of Materials Science and EngineeringNational University of SingaporeSingaporeSingapore

Bibliographic information

  • DOI https://doi.org/10.1007/978-3-319-31572-0
  • Copyright Information The Author(s) 2016
  • Publisher Name Springer, Cham
  • eBook Packages Chemistry and Materials Science
  • Print ISBN 978-3-319-31570-6
  • Online ISBN 978-3-319-31572-0
  • Series Print ISSN 2192-1091
  • Series Online ISSN 2192-1105
  • About this book
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