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Dispersion Relations in Heavily-Doped Nanostructures

  • Book
  • © 2016

Overview

Authors:
  1. Kamakhya Prasad Ghatak

    1. Salt Lake Campus, Institute of Engineering and Management, Kolkata, India

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  • Presents measurements of band gap in heavily doped optoelectronic materials under intense electric fields and strong external photo excitation
  • Contains 200 open research problems useful for graduate students and researchers
  • Covers a wide range of technologically important electronic compounds
  • Includes supplementary material: sn.pub/extras

Part of the book series: Springer Tracts in Modern Physics (STMP, volume 265)

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Table of contents (21 chapters)

  1. The DR in Heavily Doped (HD) Quantum Confined Superlattices

    1. The DR in QWHDSLs Under Magnetic Quantization

      • Kamakhya Prasad Ghatak
      Pages 471-477

  2. Dispersion Relations in HD Kane Type Semiconductors in the Presence of Light Waves

    1. Front Matter

      Pages 479-479
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    2. The DR Under Photo Excitation in HD Kane Type Semiconductors

      • Kamakhya Prasad Ghatak
      Pages 481-543

  3. Dispersion Relations in HD Kane Type Semiconductors in the Presence of Intense Electric Field

    1. Front Matter

      Pages 545-545
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    2. The DR Under Intense Electric Field in HD Kane Type Semiconductors

      • Kamakhya Prasad Ghatak
      Pages 547-583

    3. Few Related Applications

      • Kamakhya Prasad Ghatak
      Pages 585-614

    4. Conclusion and Scope for Future Research

      • Kamakhya Prasad Ghatak
      Pages 615-618

  4. Back Matter

    Pages 619-625
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Keywords

About this book

This book presents the dispersion relation in heavily doped nano-structures. The materials considered are III-V, II-VI, IV-VI, GaP, Ge, Platinum Antimonide, stressed, GaSb, Te, II-V, HgTe/CdTe superlattices and Bismuth Telluride semiconductors. The dispersion relation is discussed under magnetic quantization and on the basis of carrier energy spectra. The influences of magnetic field, magneto inversion, and magneto nipi structures on nano-structures is analyzed. The band structure of optoelectronic materials changes with photo-excitation in a fundamental way according to newly formulated electron dispersion laws. They control the quantum effect in optoelectronic devices in the presence of light. The measurement of band gaps in optoelectronic materials in the presence of external photo-excitation is displayed. The influences of magnetic quantization, crossed electric and quantizing fields, intense electric fields on the on the dispersion relation in heavily doped semiconductors and super-lattices are also discussed. This book contains 200 open research problems which form the integral part of the text and are useful for graduate students and researchers. The book is written for post graduate students, researchers and engineers.

Authors and Affiliations

  • Salt Lake Campus, Institute of Engineering and Management, Kolkata, India

    Kamakhya Prasad Ghatak

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