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Toward Quantum FinFET

  • Weihua Han
  • Zhiming M. Wang

Part of the Lecture Notes in Nanoscale Science and Technology book series (LNNST, volume 17)

Table of contents

  1. Front Matter
    Pages i-xi
  2. Yasser M. Sabry, Mohammed M. El-Banna, Tarek M. Abdolkader, Wael Fikry
    Pages 1-24
  3. Kerem Akarvardar, Chadwin D. Young, Mehmet O. Baykan, Christopher C. Hobbs
    Pages 55-79
  4. Hui-Wen Cheng, Yiming Li
    Pages 125-158
  5. Greg Leung, Chi On Chui
    Pages 159-203
  6. Mayank Shrivastava, Harald Gossner, V. Ramgopal Rao
    Pages 247-262
  7. Lining Zhang, Chenyue Ma, Xinnan Lin, Jin He, Mansun Chan
    Pages 263-284
  8. Lin-Jun Wang, Tao Tu, Li Wang, Cheng Zhou, Guo-Ping Guo
    Pages 325-350
  9. Back Matter
    Pages 361-363

About this book

Introduction

This book reviews a range of quantum phenomena in novel nanoscale transistors called FinFETs, including quantized conductance of 1D transport, single electron effect, tunneling transport, etc. The goal is to create a fundamental bridge between quantum FinFET and nanotechnology to stimulate readers' interest in developing new types of semiconductor technology. Although the rapid development of micro-nano fabrication is driving the MOSFET downscaling trend that is evolving from planar channel to nonplanar FinFET, silicon-based CMOS technology is expected to face fundamental limits in the near future. Therefore, new types of nanoscale devices are being investigated aggressively to take advantage of the quantum effect in carrier transport. The quantum confinement effect of FinFET at room temperatures was reported following the breakthrough to sub-10nm scale technology in silicon nanowires. With chapters written by leading scientists throughout the world, Toward Quantum FinFET provides a comprehensive introduction to the field as well as a platform for knowledge sharing and dissemination of the latest advances. As a  roadmap to guide further research in an area of increasing importance for the future development of materials science, nanofabrication technology, and nano-electronic devices, the book can be recommended for Physics, Electrical Engineering, and Materials Science departments, and as a reference on micro-nano electronic science and device design.

  • Offers comprehensive coverage of novel nanoscale transistors with quantum confinement effect
  • Provides the keys to understanding the emerging area of the quantum FinFET
  • Written by leading experts in each research area
  • Describes a key enabling technology for research and development of nanofabrication and nanoelectronic devices

Keywords

CMOS-compatibility Fin Shape Fluctuation, FinFETs FinFET FinFET Quantum Mechanical Potential Modelling FinFET Quantum Phenomena FinFET Quantum Transport Simulation FinFET Technologies, Device Variability FinFETs, Electrical Transport Funneling Transport Gate-all-around Nanowire MOSFETs High Voltage FinFETs for SoC Applications Highly Scaled SiGe/Si Core/Shell Nanowire MOSFET Mulgi-gate FinFET Nanofabrication Nonplanar FinFet Novel Nanoscale Transistors for Semiconductors Quantized Conductance 1D Transport Quantum Confinement Quantum Confinement Effect of FinFET Quantum Dots on Graphene Quantum FinFET Electronics Quantum FinFET and Nanotechnology Quantum Transport Schottky Warp-Gate Controlled Single Electron Transistor Silicon Nanowire Single Electron Effect Single Electron Transistor, Graphene Work-function Variability, FinFETs

Editors and affiliations

  • Weihua Han
    • 1
  • Zhiming M. Wang
    • 2
  1. 1.Engineering Research Center for Semiconductor Integrated TechnologyChinese Academy of SciencesBeijingPeople's Republic of China
  2. 2.Engineering Research Center for Semiconductor Integrated TechnologyChinese Academy of SciencesBeijingPeople's Republic of China

Bibliographic information

  • DOI https://doi.org/10.1007/978-3-319-02021-1
  • Copyright Information Springer International Publishing Switzerland 2013
  • Publisher Name Springer, Cham
  • eBook Packages Physics and Astronomy
  • Print ISBN 978-3-319-02020-4
  • Online ISBN 978-3-319-02021-1
  • Series Print ISSN 2195-2159
  • Series Online ISSN 2195-2167
  • Buy this book on publisher's site
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