Physics of Semiconductor Devices

  • Massimo Rudan

Table of contents

  1. Front Matter
    Pages i-xxiii
  2. A Review of Analytical Mechanics and Electromagnetism

    1. Front Matter
      Pages 1-1
    2. Massimo Rudan
      Pages 3-23
    3. Massimo Rudan
      Pages 71-86
  3. Introductory Concepts to Statistical and Quantum Mechanics

    1. Front Matter
      Pages 109-109
    2. Massimo Rudan
      Pages 129-154
    3. Massimo Rudan
      Pages 155-174
    4. Massimo Rudan
      Pages 175-186
    5. Massimo Rudan
      Pages 187-197
  4. Applications of the Schrödinger Equation

    1. Front Matter
      Pages 199-199
    2. Massimo Rudan
      Pages 201-216
    3. Massimo Rudan
      Pages 227-251
    4. Massimo Rudan
      Pages 253-265
  5. Systems of Interacting Particles—Quantum Statistics

    1. Front Matter
      Pages 267-267
    2. Massimo Rudan
      Pages 269-292
    3. Massimo Rudan
      Pages 293-302
  6. Applications to Semiconducting Crystals

    1. Front Matter
      Pages 303-303
    2. Massimo Rudan
      Pages 305-367
  7. Transport Phenomena in Semiconductors

    1. Front Matter
      Pages 401-401
    2. Massimo Rudan
      Pages 403-449
    3. Massimo Rudan
      Pages 451-481
  8. Basic Semiconductor Devices

    1. Front Matter
      Pages 483-483
    2. Massimo Rudan
      Pages 485-508
    3. Massimo Rudan
      Pages 509-538
  9. Miscellany

    1. Front Matter
      Pages 539-539
    2. Massimo Rudan
      Pages 541-556
    3. Massimo Rudan
      Pages 557-573
    4. Massimo Rudan
      Pages 575-584
  10. Back Matter
    Pages 585-649

About this book


This book describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices.  Details are worked out carefully and derived from the basic physics, while keeping the internal coherence of the concepts and explaining various levels of approximation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS). The final chapters are devoted to the description of some basic fabrication steps, and to  measuring methods for the semiconductor-device parameters.


Physics of Semiconductor Devices Semiconductor Devices Semiconductor Physics Semiconductor Technology Semiconductor-device Architectures Solid-State Physics and Semiconductor Devices

Authors and affiliations

  • Massimo Rudan
    • 1
  1. 1.University of BolognaBolognaItaly

Bibliographic information

  • DOI
  • Copyright Information Springer Science+Business Media New York 2015
  • Publisher Name Springer, New York, NY
  • eBook Packages Engineering
  • Print ISBN 978-1-4939-1150-9
  • Online ISBN 978-1-4939-1151-6
  • Buy this book on publisher's site
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