Computational Electronics

1. Monte Carlo Simulation — Boltzmann Equation

   1. Computer Experiments for High Electron Mobility Transistors and Avalanching Devices

      • Kevin F. Brennan, Yang Wang, Duke H. Park

      Pages 97-105

   2. Minority Electron Transport Across Submicron Layers of GaAs and InP

      • M. A. Osman, N. S. Dogan

      Pages 107-110

   3. Photoconductive Switch Simulation with Absorbing Boundary Conditions

      • R. P. Joshi, K. M. Connolly, S. El-Ghazaly, R. O. Grondin

      Pages 111-114

   4. Simulation of Sub-Micron GaAs MESFETs for Microwave Control

      • Sanjay A. Khan, Ronald J. Gutmann

      Pages 115-118

   5. Eigenvalue Solution to Steady-State Boltzmann Equation

      • S. Krishnamurthy, M. van Schilfgaarde

      Pages 119-122

   6. Variable Threshold Heterostructure FET Studied by Monte Carlo Simulation

      • G. U. Jensen, M. Shur

      Pages 123-126

   7. A Study of the Relaxation-Time Model based on the Monte Carlo Simulation

      • Shin-Chi Lee, Ting-wei Tang

      Pages 127-130

   8. Field Assisted Impact Ionization in Semiconductors

      • J. Bude, K. Hess, G. J. Iafrate

      Pages 131-136

   9. Parallelization of Monte Carlo Algorithms in Semiconductor Device Physics on Hypercube Multiprocessors

      • Udaya A. Ranawake, Patrick Lenders, Stephen M. Goodnick

      Pages 137-140

   10. Comparative Numerical Simulations of a GaAs Submicron FET using The Moments of the Boltzmann Transport and Monte Carlo Methods

       • J. P. Kreskovsky, G. A. Andrews, B. J. Morrison, H. L. Grubin

       Pages 141-144

   11. J-V Characteristics of Graded Al _x Ga _1-x As Heterojunction Barriers Using the Self Consistent Ensemble Monte Carlo Method

       • R. Kamoua, J. R. East, G. I. Haddad

       Pages 145-148

   12. Monte Carlo Simulation of Lateral Surface Superlattices in a Magnetic Field

       • T. Yamada, A. M. Kriman, D. K. Ferry

       Pages 149-152

   13. Quantum-Well Infrared Photodetectors: Monte Carlo Simulations of Transport

       • M. Artaki, I. C. Kizilyalli

       Pages 153-156

   14. Simulation of non-stationary electron transport using scattering matrices

       • A. Das, M. S. Lundstrom

       Pages 157-160

   15. Rigid Pseudo-Ion Calculation of the Intervalley Electron-Phonon Interaction in Silicon

       • J. M. Higman

       Pages 161-164

   16. Numerical Study of High Field Transport in SiO2 with Traps: A Coupled Monte Carlo and Rate Equation Model

       • R. L. Kamocsai, W. Porod

       Pages 165-168

   17. Transient Monte Carlo Simulation of Heterojunction Microwave Oscillators

       • Christopher H. Lee, Umberto Ravaioli

       Pages 169-172

   18. Monte Carlo Simulations for Submicron InP Two-Terminal Transferred Electron Devices

       • V. V. Mitin, M. P. Shaw, V. M. Ivastchenko, K. F. Wu

       Pages 173-176

   19. Monte Carlo Simulation of Low-Dimensional Nanostructures

       • D. Jovanovic, S. Briggs, J. P. Leburton

       Pages 177-180

2. Quantum Transport

   1. Front Matter

      Pages 181-181

      PDF

Large computational resources are of ever increasing importance for the simulation of semiconductor processes, devices and integrated circuits. The Workshop on Computational Electronics was intended to be a forum for the dis­ cussion of the state-of-the-art of device simulation. Three major research areas were covered: conventional simulations, based on the drift-diffusion and the hydrodynamic models; Monte Carlo methods and other techniques for the solution of the Boltzmann transport equation; and computational approaches to quantum transport which are relevant to novel devices based on quantum interference and resonant tunneling phenomena. Our goal was to bring together researchers from various disciplines that contribute to the advancement of device simulation. These include Computer Sci­ ence, Electrical Engineering, Applied Physics and Applied Mathematics. The suc­ cess of this multidisciplinary formula was proven by numerous interactions which took place at the Workshop and during the following three-day Short Course on Computational Electronics. The format of the course, including a number of tutorial lectures, and the large attendance of graduate students, stimulated many discussions and has proven to us once more the importance of cross-fertilization between the different disciplines.

• Computer
• Laser
• Signal
• Simulation
• Transistor
• electronics
• field-effect transistor
• heterojunction bipolar transistor
• metal semiconductor field-effect transistor
• model
• modeling
• numerical analysis
• numerical methods

• Beckman Institute, University of Illinois, USA

  K. Hess, J. P. Leburton, U. Ravaioli

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