Spontaneous Ordering in Semiconductor Alloys

1. Front Matter

   Pages i-xix

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2. Basic Aspects of Atomic Ordering in III–V Semiconductor Alloys

   • Tohru Suzuki

   Pages 1-43

3. The Nature and Origin of Atomic Ordering in Group III-V Antimonide Semiconductor Alloys

   • A. G. Norman

   Pages 45-97

4. Effects of the Surface on CuPt Ordering During OMVPE Growth

   • G. B. Stringfellow

   Pages 99-117

5. X-Ray Diffraction Analysis of Ordering in Epitaxial III–V Alloys

   • Rebecca L. Forrest

   Pages 119-146

6. Surface Morphology and Formation of Antiphase Boundaries in Ordered (GaIn)P — A TEM Study

   • Torsten Sass, Ines Pietzonka

   Pages 147-163

7. X-Ray Characterization of CuPt Ordered III–V Ternary Alloys

   • Jianhua Li

   Pages 165-193

8. Diffraction and Imaging of Ordered Semiconductors

   • S. P. Ahrenkiel

   Pages 195-233

9. X-Ray Analysis of the Short-Range Order in the Ordered-Alloy Domains of Epitaxial (Ga,In) P Layers by DAFS of Superlattice Reflections

   • Dirk C. Meyer, Kurt Richter, Peter Paufler, Gerald Wagner

   Pages 235-256

10. Ballistic Electron Emission Microscopy and Spectroscopy Study of Ordering-Induced Band Structure Effects in Ga0.52In0.48P

    • M. Kozhevnikov, V. Narayanamurti

    Pages 257-271

11. Cross-Sectional Scanning Tunneling Microscopy as a Probe of Local Order in Semiconductor Alloys

    • Jeremy D. Steinshnider, Michael B. Weimer, Mark C. Hanna

    Pages 273-282

12. The Physics of Tunable Disorder in Semiconductor Alloys

    • Angelo Mascarenhas, Yong Zhang

    Pages 283-326

13. Spectroscopic Study of the Interface and Band Alignment at the GaInP(Partially Ordered)/GaAs Heterojunction under High Pressure and High Magnetic Field

    • P. Y. Yu, G. Martinez, J. Zeman, K. Uchida

    Pages 327-364

14. Polarization Effects in the (Electro)absorption of Ordered GaInP and their Device Applications

    • Peter Kiesel, Thomas Kippenberg, Gottfried H. Döhler

    Pages 365-389

15. Phonons in Ordered Semiconductor Alloys

    • Angelo Mascarenhas, Hyeonsik M. Cheong, M. J. Seong, Francesc Alsina

    Pages 391-422

16. Effects of Ordering on Physical Properties of Semiconductor Alloys

    • Su-Huai Wei

    Pages 423-450

17. Polarization Charges at Spontaneously Ordered (In,Ga)P/GaAs Interfaces

    • Peter Krispin

    Pages 451-468

18. Back Matter

    Pages 469-474

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The phenomenonofspontaneous ordering in semiconductoralloys, which can be categorized as a self-organized process, is observed to occur sponta­ neously during epitaxial growth of certain ternary alloy semiconductors and results in a modification of their structural, electronic, and optical properties. There has been a great dealofinterest in learning how to control this phenome­ non so that it may be used for tailoring desirable electronic and optical properties. There has been even greater interest in exploiting the phenomenon for its unique ability in providing an experimental environment of controlled alloy statistical fluctuations. As such, itimpacts areasofsemiconductorscience and technology related to the materials science ofepitaxial growth, statistical mechanics, and electronic structure of alloys and electronic and photonic devices. During the past two decades, significant progress has been made toward understanding the mechanisms that drive this phenomenon and the changes in physical properties that result from it. A variety of experimental techniques have been used to probe the phenomenon and several attempts made atproviding theoretical models both for the ordering mechanisms as well as electronic structure changes. The various chapters of this book provide a detailed account of these efforts during the past decade. The first chapter provides an elaborate account of the phenomenon, with an excellent perspective of the structural and elec­ tronic modifications itinduces.

• Experiment
• alloy
• diffraction
• mechanics
• microscopy
• morphology
• spectroscopy

• National Renewable Energy Laboratory (NREL), Golden, USA

  Angelo Mascarenhas

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