Metal-Dielectric Interfaces in Gigascale Electronics

Thermal and Electrical Stability

  • Ming He
  • Toh-Ming Lu

Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 157)

Table of contents

  1. Front Matter
    Pages i-xi
  2. Ming He, Toh-Ming Lu
    Pages 1-9
  3. Ming He, Toh-Ming Lu
    Pages 11-22
  4. Ming He, Toh-Ming Lu
    Pages 23-44
  5. Ming He, Toh-Ming Lu
    Pages 45-55
  6. Ming He, Toh-Ming Lu
    Pages 57-74
  7. Ming He, Toh-Ming Lu
    Pages 75-89
  8. Ming He, Toh-Ming Lu
    Pages 91-108
  9. Ming He, Toh-Ming Lu
    Pages 109-125
  10. Back Matter
    Pages 147-149

About this book

Introduction

Metal-dielectric interfaces are ubiquitous in modern electronics. As advanced gigascale electronic devices continue to shrink, the stability of these interfaces is becoming an increasingly important issue that has a profound impact on the operational reliability of these devices. In this book, the authors present the basic science underlying  the thermal and electrical stability of metal-dielectric interfaces and its relationship to the operation of advanced interconnect systems in gigascale electronics. Interface phenomena, including chemical reactions between metals and dielectrics, metallic-atom diffusion, and ion drift, are discussed based on fundamental physical and chemical principles. Schematic diagrams are provided throughout the book to illustrate  interface phenomena and the principles that govern them.

Metal-Dielectric Interfaces in Gigascale Electronics  provides a unifying approach to the diverse and sometimes contradictory test results that are reported in the literature on metal-dielectric interfaces. The goal is to provide readers with a clear account of the relationship between interface science and its applications in interconnect structures. The material presented here will also be of interest to those engaged in field-effect transistor and memristor device research, as well as university researchers and industrial scientists working in the areas of electronic materials processing, semiconductor manufacturing, memory chips, and IC design.   Presents a unified approach to understanding the diverse phenomena observed at metal-dielectric interfaces

Features fundamental considerations in the physics and chemistry of metal-dielectric interactions

Explores mechanisms of metal atom diffusion and metal ion drift in dielectrics

Provides keys to understanding reliability in gigascale electronics

Focuses on a dynamic area of current research that is a foundation of future interconnect systems, memristors, and solid-state electrolyte devices

Presents a unified approach to understanding the diverse phenomena observed at metal-dielectric interfaces

Keywords

Cu interconnect technology Flatband voltage shifts in metal-dielectric- Fundamental science metal-dielectric interfaces Low-k dielectrics Metal atom diffusion and metal ion drift in dielectrics Metal-dielectric interface Metal-dielectric interfaces book Metal-dielectric interfaces experimental techniques Metal-dielectric interfaces stability Metal-dielectric interfaces stability book Thermal and electric stability of metal-dielectric interfaces semiconductor capacitors

Authors and affiliations

  • Ming He
    • 1
  • Toh-Ming Lu
    • 2
  1. 1., Department of Physics, Applied PhysicsRensselaer Polytechnic InstituteTroyUSA
  2. 2.Center for Integrated ElectronicsRensselaer Polytechnic InstituteTROYUSA

Bibliographic information

  • DOI https://doi.org/10.1007/978-1-4614-1812-2
  • Copyright Information Springer Science+Business Media, LLC 2012
  • Publisher Name Springer, New York, NY
  • eBook Packages Physics and Astronomy
  • Print ISBN 978-1-4614-1811-5
  • Online ISBN 978-1-4614-1812-2
  • Series Print ISSN 0933-033X
  • Series Online ISSN 2196-2812
  • About this book
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