Advertisement

Lifetime Spectroscopy

A Method of Defect Characterization in Silicon for Photovoltaic Applications

  • Stefan Rein

Part of the Springer Series in Material Science book series (SSMATERIALS, volume 85)

About this book

Introduction

Lifetime spectroscopy is one of the most sensitive diagnostic tools for the identification and analysis of impurities in semiconductors. Since it is based on the recombination process, it provides insight into precisely those defects that are relevant to semiconductor devices such as solar cells. This book introduces a transparent modeling procedure that allows a detailed theoretical evaluation of the spectroscopic potential of the different lifetime spectroscopic techniques. The various theoretical predictions are verified experimentally with the context of a comprehensive study on different metal impurities. The quality and consistency of the spectroscopic results, as explained here, confirms the excellent performance of lifetime spectroscopy.

Keywords

Defects in Silicon Experiment Lifetime spectroscopy Semiconductor Shockly-Read-Hall recombination metal modeling semiconductors solar cell spectroscopy

Authors and affiliations

  • Stefan Rein
    • 1
  1. 1.Department Solar Cells, Materials and TechnologyFraunhofer Institute for Solar Energy SystemsFreiburgGermany

Bibliographic information

  • DOI https://doi.org/10.1007/3-540-27922-9
  • Copyright Information Springer-Verlag Berlin Heidelberg 2005
  • Publisher Name Springer, Berlin, Heidelberg
  • eBook Packages Physics and Astronomy
  • Print ISBN 978-3-540-25303-7
  • Online ISBN 978-3-540-27922-8
  • Series Print ISSN 0933-033X
  • Series Online ISSN 2196-2812
  • Buy this book on publisher's site
Industry Sectors
Chemical Manufacturing
Electronics
Oil, Gas & Geosciences