CCD Image Sensors in Deep-Ultraviolet

Degradation Behavior and Damage Mechanisms

  • Flora M. Li
  • Arokia Nathan

Part of the Microtechnology and Mems book series (MEMS)

Table of contents

  1. Front Matter
    Pages I-XI
  2. Pages 1-4
  3. CCD Image Sensors

  4. Instabilities in Si, SiO2, and the Si-SiO2 Interface

    1. Pages 45-50
    2. Pages 51-79
    3. Pages 81-91
  5. Effects of Radiation on the Si-SiO2 System

  6. Interaction of UV Radiation with the Si-SiO2 System

  7. Interaction of DUV Radiation with CCD Sensors

  8. Concluding Remarks & Future Research

  9. Back Matter
    Pages 211-231

About this book


As the deep-ultraviolet (DUV) laser technology continues to mature, an increasing number of industrial and manufacturing applications are emerging. For example, the new generation of semiconductor inspection systems is being pushed to image at increasingly shorter DUV wavelengths to facilitate inspection of deep sub-micron features in integrated circuits. DUV-sensitive charge-coupled device (CCD) cameras are in demand for these applications. Although CCD cameras that are responsive at DUV wavelengths are now available, their long-term stability is still a major concern. This book describes the degradation mechanisms and long-term performance of CCDs in the DUV, along with new results of device performance at these wavelengths.


CCD image sensor Deep-UV damage mechanisms Eximer laser Photodiode Sensor UV photodiodes design imaging integrated circuit laser optimization semiconductor technology

Authors and affiliations

  • Flora M. Li
    • 1
  • Arokia Nathan
    • 1
  1. 1.Electrical & Computer EngineeringUniversity of WaterlooWaterlooCanada

Bibliographic information

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