© 2005

Silicon Quantum Integrated Circuits

Silicon-Germanium Heterostructure Devices: Basics and Realisations


Part of the NanoScience and Technology book series (NANO)

Table of contents

  1. Front Matter
    Pages i-xii
  2. Pages 1-12
  3. Pages 13-47
  4. Pages 235-279
  5. Pages 281-309
  6. Pages 311-346
  7. Pages 347-351
  8. Back Matter
    Pages 353-361

About this book


Quantum size effects are becoming increasingly important in microelectronics as the dimensions of the structures shrinks laterally towards 100 nm and vertically towards 10 nm. Advanced device concepts will exploit these effects for integrated circuits with novel or improved properties. Keeping in mind the trend towards systems on chip, this book deals with silicon-based quantum devices and focuses on room temperature operation. The basic physical principles, materials, technological aspects and fundamental device operation are discussed in an interdisciplinary manner. It is shown that silicon-germanium (SiGe) heterostructure devices will play a key role in realizing silicon-based quantum electronics.


Epitaxy Microelectronics Quantum effect devices Strained layer heterostructures Transistor electronics field-effect transistor heterojunction bipolar transistor integrated circuit optoelectronics

Authors and affiliations

  1. 1.Institute of Semiconductor EngineeringUniversity of StuttgartStuttgartGermany
  2. 2.Cavendish LaboratoryUniversity of CambridgeCambridgeUK

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