Table of contents

  1. Front Matter
  2. James F. Scott
    Pages 3-16
  3. Takeshi Kijima, Hiroshi Ishiwara
    Pages 17-30
  4. Rainer Waser, Ulrich Böttger, Michael Grossmann
    Pages 31-46
  5. Valanoor Nagarajan, Chandan S. Ganpule, Ramamoorthy Ramesh
    Pages 47-70
  6. Koukou Suu
    Pages 71-84
  7. Orlando Auciello, Anil M. Dhote, Bao T. Liu, Sanjeev Aggarwal, Ramamoorthy Ramesh
    Pages 105-122
  8. Glen R. Fox, Richard Bailey, William B. Kraus, Fan Chu, Shan Sun, Tom Davenport
    Pages 139-148
  9. Ali Sheikholeslami
    Pages 149-164
  10. Kinam Kim
    Pages 165-176
  11. Yasuhiro Shimada
    Pages 177-196
  12. Daisaburo Takashima, Yukihito Oowaki
    Pages 197-214
  13. Hiromitsu Hada, Kazushi Amanuma, Tohru Miwa, Sota Kobayashi, Toru Tatsumi, Yukihiko Maejima et al.
    Pages 215-232
  14. Hiroshi Ishiwara
    Pages 233-254
  15. Yoshikazu Fujimori, Takashi Nakamura, Hidemi Takasu
    Pages 255-270
  16. Shoichi Masui, Shunsuke Fueki, Koichi Masutani, Amane Inoue, Toshiyuki Teramoto, Tetsuo Suzuki et al.
    Pages 271-283

About this book

Introduction

In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on.This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book consists of 5 parts; (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects, and each part is further devided in several chapters. Because of the wide range of the discussed topics, each chapter in this book was written by one of the best authors knowing the specific topic very well. Thus, this is a good introduction book of FeRAM for graduate students and new comers to this field, as well as it helps specialists to understand FeRAMs more deeply.

Keywords

Ferroelectric RAM Metals and Alloys Random Access Memory Semiconductors alloy circuit design High Density liquid material metals microscopy nano-scale reliability semiconductor testing thin films

Editors and affiliations

  • Hiroshi Ishiwara
    • 1
  • Masanori Okuyama
    • 2
  • Yoshihiro Arimoto
    • 3
  1. 1.Frontier Collaborative Research CenterTokyo Institute of TechnologyYokohamaJapan
  2. 2.Graduate School of Engineering Science, Department of Systems InnovationOsaka UniversityOsakaJapan
  3. 3.Silicon Technology LaboratoriesFujitsu Laboratories Ltd.AtsugiJapan

Bibliographic information

  • DOI https://doi.org/10.1007/b12953
  • Copyright Information Springer-Verlag Berlin Heidelberg 2004
  • Publisher Name Springer, Berlin, Heidelberg
  • eBook Packages Springer Book Archive
  • Print ISBN 978-3-540-40718-8
  • Online ISBN 978-3-540-45163-1
  • Series Print ISSN 0303-4216
  • Series Online ISSN 1437-0859
  • About this book
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