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Formation of KNbO3 Thin Films for Self-Powered ReRAM Devices and Artificial Synapses

  • Tae-Ho Lee

Part of the Springer Theses book series (Springer Theses)

Table of contents

  1. Front Matter
    Pages i-xxi
  2. Tae-Ho Lee
    Pages 1-5
  3. Tae-Ho Lee
    Pages 7-32
  4. Tae-Ho Lee
    Pages 33-42
  5. Tae-Ho Lee
    Pages 43-95
  6. Tae-Ho Lee
    Pages 97-98

About this book

Introduction

This thesis describes an investigation into homogeneous KN crystalline films grown on Pt/Ti/SiO2/Si substrates, amorphous KN films grown on TiN/Si substrates using the RF-sputtering method, and the ferroelectic and piezoelectric properties of these KN films. KNbO3 (KN) thin films have been extensively investigated for applications in nonlinear optical, electro-optical and piezoelectric devices.  However, the electrical properties of KN films have not yet been reported, because it is difficult to grow stoichiometric KN thin films due to K2O evaporation during growth.

This thesis also reports on the ReRAM properties of a biocompatible KN ReRAM memristor powered by the KN nanogenerator, and finally shows the biological synaptic properties of the KN memristor for application to the artificial synapse of a neuromorphic computing system.


Keywords

KNbO3 (KN) thin film stoichiometric KN thin film homogeneous KN crystalline film ferroelectric and piezoelectric properties piezoelectric nanogenerating ReRAM properties KN memristor neuromorphic computing system biocompatible KN ReRAM memristor

Authors and affiliations

  • Tae-Ho Lee
    • 1
  1. 1.Korea Electronics Technology InstituteSeongnamKorea (Republic of)

Bibliographic information

  • DOI https://doi.org/10.1007/978-981-13-2535-9
  • Copyright Information Springer Nature Singapore Pte Ltd. 2018
  • Publisher Name Springer, Singapore
  • eBook Packages Chemistry and Materials Science
  • Print ISBN 978-981-13-2534-2
  • Online ISBN 978-981-13-2535-9
  • Series Print ISSN 2190-5053
  • Series Online ISSN 2190-5061
  • Buy this book on publisher's site
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