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Ti-Sb-Te Phase Change Materials: Component Optimisation, Mechanism and Applications

  • Min Zhu

Part of the Springer Theses book series (Springer Theses)

About this book

Introduction

This book introduces a novel Ti-Sb-Te alloy for high-speed and low-power phase-change memory applications, which demonstrates a phase-change mechanism that differs significantly from that of conventional Ge2Sb2Te5 and yields favorable overall performance. Systematic methods, combined with better material characteristics, are used to optimize the material components and device performance. Subsequently, a phase-change memory chip based on the optimized component is successfully fabricated using 40-nm complementary metal-oxide semiconductor technology, which offers a number of advantages in many embedded applications.

Keywords

Phase Change Memory Phase Change Mechanism ABAB Ring Statistics Non-volatile Memory Reversible physical Phase Transition Electron Charge-based Mechanism

Authors and affiliations

  • Min Zhu
    • 1
  1. 1.Shanghai Institute of Microsystem and InInformation TechnologyChinese Academy of Sciences Shanghai Institute of Microsystem and InShanghaiChina

Bibliographic information

  • DOI https://doi.org/10.1007/978-981-10-4382-6
  • Copyright Information Springer Nature Singapore Pte Ltd. 2017
  • Publisher Name Springer, Singapore
  • eBook Packages Physics and Astronomy
  • Print ISBN 978-981-10-4381-9
  • Online ISBN 978-981-10-4382-6
  • Series Print ISSN 2190-5053
  • Series Online ISSN 2190-5061
  • Buy this book on publisher's site
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