© 1993

Semiconductor Interfaces at the Sub-Nanometer Scale

  • H. W. M. Salemink
  • M. D. Pashley

Part of the NATO ASI Series book series (NSSE, volume 243)

Table of contents

  1. Front Matter
    Pages i-xi
  2. Epitaxial Growth of Semiconductors

    1. Y. Horikoshi, M. Kawashima, H. Yamaguchi, M. Sato
      Pages 1-10
    2. P. M. Koenraad, I. Bársony, J. C. M. Henning, J. A. A. P. Perenboom, J. H. Wolter
      Pages 35-43
    3. M. D. Pashley, K. W. Haberern
      Pages 63-73
    4. M. C. Yalabik, A. Kabakçioğlu
      Pages 75-81
    5. J-W Sakai, P. H. Beton, M. Henini, P. C. Main, L. Eaves, G. Hill
      Pages 83-88
  3. Electronic Properties of Semiconductor Interfaces

    1. A. Baldereschi, R. Resta, M. Peressi, S. Baroni, K. Mäder
      Pages 89-103
    2. J. P. Landesman, J. Nagle, J. C. Garcia, C. Mottet, M. Larive, J. Massies et al.
      Pages 105-113
    3. R. H. Williams, T. H. Shen, S. Hooper
      Pages 115-120
    4. O. Pankratov, M. Scheffler
      Pages 121-126
  4. Atomic Scale Analysis of Semiconductor Interfaces

    1. R. M. Feenstra, A. Vaterlaus, E. T. Yu, P. D. Kirchner, C. L. Lin, J. M. Woodall et al.
      Pages 127-137
    2. H. W. M. Salemink, M. B. Johnson, U. Maier, P. Koenraad, O. Albrektsen
      Pages 151-160
  5. Group IV Materials

    1. E. Kasper
      Pages 161-171
    2. K. Werner, S. Butzke, P. F. A. Alkemade, S. Radelaar, J. Trommel, P. Balk et al.
      Pages 181-189

About this book


The Advanced Research Workshop on the Physical Properties of Semiconductor Interfaces at the Sub-Nanometer Scale was held from 31 August to 2 September, 1992, in Riva del Garda. Italy. The aim of the workshop was to bring together experts in different aspects of the study of semiconductor interfaces and in small-scale devices where the interface properties can be very significant It was our aim that this would help focus research of the growth and characterization of semiconductor interfaces at the atomic scale on the issues that will have the greatest impact on devices of the future. Some 30 participants from industrial and academic research institutes and from 11 countries contributed to the workshop with papers on their recent wode. . 'There was ample time for discussion after each talk. as well as a summary discussion at the end of the meeting. The major themes of the meeting are described below. The meeting included several talks relating to the different growth techniques used in heteroepitaxial growth of semiconductors. Horikoshi discussed the atomistic processes involved in MBE, MEE and MOCVD, presenting results of experimental RHEED and photoluminescence measurements; Foxon compared the merits of MBE, MOCVD, and eBE growth; Molder described RHEED studies of Si/Ge growth by GSMBE, and Pashley discussed the role of surface reconstructions in MBE growth as seen from STM studies on GaAs. On the theoretical side, Vvedensky described several different methods to model growth: molecular dynamics, Monte Carlo techniques, and analytic modeling.


Helium-Atom-Streuung STM Semiconductor semiconductors spectroscopy

Editors and affiliations

  • H. W. M. Salemink
    • 1
  • M. D. Pashley
    • 2
  1. 1.IBM Research DivisionZurich Research LaboratoryRüschlikonSwitzerland
  2. 2.Philips LaboratoriesBriarcliff ManorNew YorkUSA

Bibliographic information

Industry Sectors
Chemical Manufacturing
Oil, Gas & Geosciences