Defects in SiO2 and Related Dielectrics: Science and Technology

  • G. Pacchioni
  • L. Skuja
  • D. L. Griscom

Part of the NATO Science Series book series (NAII, volume 2)

Table of contents

  1. Front Matter
    Pages i-viii
  2. Structure and Topology

  3. Bulk Defects

  4. Surface Defects

  5. Bragg Grating

  6. Si/SiO2 Interface and Gate Dielectrics

  7. Back Matter
    Pages 617-624

About this book


Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies.
This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.


Doping Exciton Semiconductor crystal dynamics glass optics spectroscopy

Editors and affiliations

  • G. Pacchioni
    • 1
  • L. Skuja
    • 2
  • D. L. Griscom
    • 3
  1. 1.Dipartimento di Scienza dei MaterialiUniversità Milano-BicoccaMilanoItaly
  2. 2.Institute of Solid State PhysicsUniversity of LatviaRigaLatvia
  3. 3.Naval Research LaboratoryUSA

Bibliographic information

  • DOI
  • Copyright Information KluwerAcademic Publishers 2000
  • Publisher Name Springer, Dordrecht
  • eBook Packages Springer Book Archive
  • Print ISBN 978-0-7923-6686-7
  • Online ISBN 978-94-010-0944-7
  • Series Print ISSN 1568-2609
  • Buy this book on publisher's site
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