© 1989

Microelectronic Materials and Processes

  • R. A. Levy

Part of the NATO ASI Series book series (NSSE, volume 164)

Table of contents

  1. Front Matter
    Pages i-xiv
  2. W. Lin, K. E. Benson
    Pages 1-24
  3. McD. Robinson
    Pages 25-78
  4. G. J. Declerck
    Pages 79-132
  5. W. D. Westwood
    Pages 133-201
  6. Werner Kern
    Pages 203-246
  7. Werner Kern
    Pages 247-273
  8. S. P. Murarka
    Pages 275-323
  9. G. N. Taylor
    Pages 325-407
  10. A. N. Broers
    Pages 409-458
  11. D. W. Hess
    Pages 459-520
  12. E. Rimini
    Pages 521-581
  13. U. Gösele
    Pages 583-634
  14. Y. Pauleau
    Pages 635-678
  15. K. V. Ravi
    Pages 679-773
  16. W. Fichtner
    Pages 775-844
  17. H. W. Werner
    Pages 845-979
  18. Back Matter
    Pages 981-985

About this book


The primary thrust of very large scale integration (VLS!) is the miniaturization of devices to increase packing density, achieve higher speed, and consume lower power. The fabrication of integrated circuits containing in excess of four million components per chip with design rules in the submicron range has now been made possible by the introduction of innovative circuit designs and the development of new microelectronic materials and processes. This book addresses the latter challenge by assessing the current status of the science and technology associated with the production of VLSI silicon circuits. It represents the cumulative effort of experts from academia and industry who have come together to blend their expertise into a tutorial overview and cohesive update of this rapidly expanding field. A balance of fundamental and applied contributions cover the basics of microelectronics materials and process engineering. Subjects in materials science include silicon, silicides, resists, dielectrics, and interconnect metallization. Subjects in process engineering include crystal growth, epitaxy, oxidation, thin film deposition, fine-line lithography, dry etching, ion implantation, and diffusion. Other related topics such as process simulation, defects phenomena, and diagnostic techniques are also included. This book is the result of a NATO-sponsored Advanced Study Institute (AS!) held in Castelvecchio Pascoli, Italy. Invited speakers at this institute provided manuscripts which were edited, updated, and integrated with other contributions solicited from non-participants to this AS!.


Metall X-Ray alloy crystal semiconductors

Editors and affiliations

  • R. A. Levy
    • 1
  1. 1.AT & T Bell LaboratoriesMurray HillUSA

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