© 1990

Planar Processing Primer


Table of contents

  1. Front Matter
    Pages i-xiii
  2. George E. Anner
    Pages 1-37
  3. George E. Anner
    Pages 39-75
  4. George E. Anner
    Pages 77-114
  5. George E. Anner
    Pages 115-144
  6. George E. Anner
    Pages 145-195
  7. George E. Anner
    Pages 197-254
  8. George E. Anner
    Pages 255-310
  9. George E. Anner
    Pages 311-358
  10. George E. Anner
    Pages 359-399
  11. George E. Anner
    Pages 401-438
  12. George E. Anner
    Pages 439-491
  13. George E. Anner
    Pages 493-534
  14. Back Matter
    Pages 535-634

About this book


Planar Processing Primer is based on lecture notes for a silicon planar process­ ing lecture/lab course offered at the University of Illinois-UC for over fifteen years. Directed primarily to electrical engineering upperclassmen and graduate students, the material also has been used successfully by graduate students in physics and ceramic and metallurgical engineering. It is suitable for self-study by engineers trained in other disciplines who are beginning work in the semiconductor fields, and it can make circuit design engineers aware of the processing limitations under which they must work. The text describes and explains, at an introductory level, the principal processing steps used to convert raw silicon into a semiconductor device or integrated circuit. First-order models are used for theoretical treatments (e.g., of diffusion and ion implantation), with reference made to more advanced treatments, to computer programs such as SUPREM that include higher order effects, and to interactions among sequential processes. In Chapters 8, 9, and to, the application of silicon processes to compound semiconductors is discussed briefly. Over the past several years, the size of transistors has decreased markedly, allowing more transistors per chip unit area, and chip size has increased.


Magnetron bipolar junction transistor bipolar power transistor ceramics circuit electrical engineering epitaxy growth integrated circuit material physics plasma etching semiconductor semiconductor device transistor

Authors and affiliations

  1. 1.University of IllinoisChampaign-UrbanaUSA

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