Skip to main content
SpringerLink
Log in
Book cover

Simulation of Semiconductor Devices and Processes

  • Conference proceedings
  • © 1995

Overview

Editors:
  1. Heiner Ryssel

    1. Fraunhofer-Institut für Integrierte Schaltungen, Erlangen, Federal Republic of Germany
      Institut für Elektronische Bauelemente, Universität Erlangen-Nürnberg, Federal Republic of Germany

    View editor publications

    You can also search for this editor in PubMed   Google Scholar

  2. Peter Pichler

    1. Fraunhofer-Institut für Integrierte Schaltungen, Erlangen, Federal Republic of Germany

    View editor publications

    You can also search for this editor in PubMed   Google Scholar

This is a preview of subscription content, log in via an institution to check access.

Access this book

Log in via an institution
eBook USD 39.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book USD 54.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Other ways to access

Licence this eBook for your library

Institutional subscriptions

Table of contents (119 papers)

  1. Advances in Numerical Methods for Convective Hydrodynamic Model of Semiconductor Devices

    • N. R. Aluru, K. H. Law, R. W. Dutton
    Pages 86-89

  2. An Advanced Cellular Automaton Method with Interpolated Flux Scheme and its Application to Modeling of Gate Currents in Si MOSFETs

    • K. Fukuda, K. Nishi
    Pages 90-93

  3. Piezoresistance and the Drift-Diffusion Model in Strained Silicon

    • A. Nathan, T. Manku
    Pages 94-97

  4. A Novel Approach to HF-Noise Characterization of Heterojunction Bipolar Transistors

    • Frank Herzel, Bernd Heinemann
    Pages 98-101

  5. Ge Profile for Minimum Neutral Base Transit Time in Si/Si1-yGey Heterojunction Bipolar Transistors

    • Wolfgang Molzer
    Pages 102-105

  6. Performance optimization in Si/SiGe heterostructure FETs

    • A. Abramo, J. Bude, F. Venturi, M.R. Pinto, E. Sangiorgi
    Pages 106-109

  7. On the Integral Representations of Electrical Characteristics in Si Devices

    • S. Biesemans, K. De Meyer
    Pages 110-113

  8. Large Signal Frequency Domain Device Analysis Via the Harmonic Balance Technique

    • B. Troyanovsky, Z. Yu, R. W. Dutton
    Pages 114-117

  9. A Method for Extracting the Threshold Voltage of MOSFETs Based on Current Components

    • K. Aoyama
    Pages 118-121

  10. 2-D MOSFET Simulation by Self-Consistent Solution of the Boltzmann and Poisson Equations Using a Generalized Spherical Harmonic Expansion

    • W.-C. Liang, Y-J. Wu, K. Hennacy, S. Singh, N. Goldsman, I. Mayergoyz
    Pages 122-125

  11. Ultra High Performance, Low Power 0.2 µm CMOS Microprocessor Technology and TCAD Requirements

    • A. Nasr, J. Faricelli, N. Khalil, C.-L. Huang
    Pages 126-134

  12. Viscoelastic Modeling of Titanium Silicidation

    • Stephen Cea, Mark Law
    Pages 135-138

  13. Multidimensional Nonlinear Viscoelastic Oxidation Modeling

    • Stephen Cea, Mark Law
    Pages 139-142

  14. Three-Dimensional Integrated Process Simulator: 3D-MIPS

    • M. Fujinaga, T. Kunikiyo, T. Uchida, K. Kamon, N. Kotani, T. Hirao
    Pages 143-146

  15. Effect of Process-Induced Mechanical Stress on Circuit Layout

    • Hideo Miura, Yasunobu Tanizaki
    Pages 147-150

  16. The Simulation System for Three-Dimensional Capacitance and Current Density Calculation with a User Friendly GUI

    • M. Mukai, T. Tatsumi, N. Nakauchi, T. Kobayashi, K. Koyama, Y. Komatsu et al.
    Pages 151-154

  17. Numerical and analytical modelling of head resistances of diffused resistors

    • U. Witkowski, D. Schroeder
    Pages 155-158

  18. New Spreading Resistance Effect For Sub-0.50 µm MOSFETs: Model and Simulation

    • Marius Orlowski, William J. Taylor
    Pages 159-162

  19. The Role of SEMATECH in Enabling Global TCAD Collaboration

    • E. M. Buturla, J. Byers, A. Husain, M. Kump, P. Lloyd, R. Manukonda et al.
    Pages 163-165

  20. Three Dimensional Simulation for Sputter Deposition Equipment and Processes

    • D. S. Bang, Z. Krivokapic, M. Hohmeyer, J. P. McVittie, K. C. Saraswat
    Pages 166-169
Back to top

Keywords

About this book

SISDEP ’95 provides an international forum for the presentation of state-of-the-art research and development results in the area of numerical process and device simulation. Continuously shrinking device dimensions, the use of new materials, and advanced processing steps in the manufacturing of semiconductor devices require new and improved software. The trend towards increasing complexity in structures and process technology demands advanced models describing all basic effects and sophisticated two and three dimensional tools for almost arbitrarily designed geometries. The book contains the latest results obtained by scientists from more than 20 countries on process simulation and modeling, simulation of process equipment, device modeling and simulation of novel devices, power semiconductors, and sensors, on device simulation and parameter extraction for circuit models, practical application of simulation, numerical methods, and software.

Editors and Affiliations

  • Fraunhofer-Institut für Integrierte Schaltungen, Erlangen, Federal Republic of Germany

    Heiner Ryssel, Peter Pichler

  • Institut für Elektronische Bauelemente, Universität Erlangen-Nürnberg, Federal Republic of Germany

    Heiner Ryssel

Bibliographic Information

Publish with us

Policies and ethics

Back to top

Search

Navigation