Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon

  • Peter Pichler

Part of the Computational Microelectronics book series (COMPUTATIONAL)

Table of contents

  1. Front Matter
    Pages i-xxi
  2. Peter Pichler
    Pages 1-75
  3. Peter Pichler
    Pages 77-227
  4. Peter Pichler
    Pages 229-279
  5. Peter Pichler
    Pages 281-329
  6. Peter Pichler
    Pages 331-467
  7. Peter Pichler
    Pages 469-512
  8. Peter Pichler
    Pages 513-536
  9. Back Matter
    Pages 537-562

About this book


Basically all properties of semiconductor devices are influenced by the distribution of point defects in their active areas. This book contains the first comprehensive review of the properties of intrinsic point defects, acceptor and donor impurities, isovalent atoms, chalcogens, and halogens in silicon, as well as of their complexes. Special emphasis is placed on compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behavior from experimental and theoretical investigations. In addition, the book discusses the fundamental concepts of silicon and its defects, the electron system, diffusion, thermodynamics, and reaction kinetics which form the scientific basis needed for a thorough understanding of the text. Therefore, the book is able to provide an introduction to newcomers in this field up to a comprehensive reference for experts in process technology, solid-state physics, and simulation of semiconductor processes.


Semiconductor acceptor and donor impurities chalcogens halogens isovalent atoms semiconductor devices simulation tables thermodynamics

Authors and affiliations

  • Peter Pichler
    • 1
  1. 1.Fraunhofer Institut für Integrierte Systeme und Bauelementetechnologie (IISB)ErlangenGermany

Bibliographic information

  • DOI
  • Copyright Information Springer-Verlag Vienna 2004
  • Publisher Name Springer, Vienna
  • eBook Packages Springer Book Archive
  • Print ISBN 978-3-7091-7204-9
  • Online ISBN 978-3-7091-0597-9
  • Series Print ISSN 0179-0307
  • Buy this book on publisher's site
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