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© 2004

Analysis and Simulation of Heterostructure Devices

Book

Part of the Computational Microelectronics book series (COMPUTATIONAL)

Table of contents

  1. Front Matter
    Pages I-XX
  2. Vassil Palankovski, Rüdiger Quay
    Pages 1-3
  3. Vassil Palankovski, Rüdiger Quay
    Pages 4-25
  4. Vassil Palankovski, Rüdiger Quay
    Pages 26-140
  5. Vassil Palankovski, Rüdiger Quay
    Pages 141-153
  6. Vassil Palankovski, Rüdiger Quay
    Pages 154-203
  7. Vassil Palankovski, Rüdiger Quay
    Pages 204-235
  8. Vassil Palankovski, Rüdiger Quay
    Pages 236-238
  9. Back Matter
    Pages 239-289

About this book

Introduction

Communication and information systems are subject to rapid and highly so­ phisticated changes. Currently semiconductor heterostructure devices, such as Heterojunction Bipolar Transistors (HBTs) and High Electron Mobility Transis­ tors (HEMTs), are among the fastest and most advanced high-frequency devices. They satisfy the requirements for low power consumption, medium integration, low cost in large quantities, and high-speed operation capabilities in circuits. In the very high-frequency range, cut-off frequencies up to 500 GHz [557] have been reported on the device level. HEMTs and HBTs are very suitable for high­ efficiency power amplifiers at 900 MHz as well as for data rates higher than 100 Gbitfs for long-range communication and thus cover a broad range of appli­ cations. To cope with explosive development costs and the competition of today's semicon­ ductor industry, Technology Computer-Aided Design (TCAD) methodologies are used extensively in development and production. As of 2003, III-V semiconductor HEMT and HBT micrometer and millimeter-wave integrated circuits (MICs and MMICs) are available on six-inch GaAs wafers. SiGe HBT circuits, as part of the CMOS technology on eight-inch wafers, are in volume production. Simulation tools for technology, devices, and circuits reduce expensive technological efforts. This book focuses on the application of simulation software to heterostructure devices with respect to industrial applications. In particular, a detailed discussion of physical modeling for a great variety of materials is presented.

Keywords

HBTs HEMTs Heterojunction Bipolar Transistors High Electron Mobility Transistors PES STEM Simulation compound semiconductors device optimization device reliability semiconductor development

Authors and affiliations

  1. 1.Institüt für MikroelektronikTechnische Universität WienAustria
  2. 2.Fraunhofer Institut für Angewandte Festkörperphysik (IAF)FreiburgGermany

Bibliographic information

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